Growth of Ca8La2(PO4)(6)O-2 single crystals as substrates for GaN epitaxial growth

Authors
Yoshikawa, A Kochurikhin, VV Futagawa, N Shimamura, K Fukuda, T
Citation
A. Yoshikawa et al., Growth of Ca8La2(PO4)(6)O-2 single crystals as substrates for GaN epitaxial growth, J CRYST GR, 204(3), 1999, pp. 302-306
Citations number
12
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
204
Issue
3
Year of publication
1999
Pages
302 - 306
Database
ISI
SICI code
0022-0248(199907)204:3<302:GOCSCA>2.0.ZU;2-Q
Abstract
[0 0 0 1] oriented Ca8La2(PO4)(6)O-2 (CLPA) single crystals with the apatit e structure are grown by the Czochralski method. Compositional and lattice parameter uniformity of CLPA is discussed in relation to the growth conditi ons. Since their lattice constant have excellent matching with three times that of GaN, they are candidates as new substrates for the growth of high-q uality GaN epitaxial layers. (C) 1999 Elsevier Science B.V. All rights rese rved.