Tilt angles at the CdTe/Cd1-yZnyTe, Hg1-xCdxTe/CdTe, CdTe GaAs heterojunctions grown by molecular beam epitaxy

A tilt direction towards the [(1) over bar (1) over bar 1] crystallographic direction, and a tilt angle of 0.2185 degrees were determined by X-ray dou ble crystal diffraction (XDCD) for a CdTe/Cd0.959Zn0.041Te(1 1 2)B heteroju nction grown by molecular beam epitaxy (MBE), and a quasi-sine function bet ween the rotation angle phi around the sample surface normal and the diffra ction angle difference Delta theta was drawn in order to obtain optimal dat a. A special oriented cross section of Hg0.535Cd0.465Te/CdTe/GaAs((1) over bar 1 2)B multilayer grown by MBE was prepared for high-resolution transmis sion electron microscopy (HRTEM) determination. The HRTEM images show that the buffer layer, CdTe((1) over bar 1 2), is inclined by about 3 degrees to wards the [(1) over bar 1 (1) over bar] orientation from the substrate GaAs ((1) over bar 1 2) at the CdTe/GaAs heterojunction, and that the epilayer H g0.535Cd0.465Te((1) over bar 1 2)is inclined by about 1 degrees towards the [1 (1) over bar 1] orientation, in the opposite direction of [(1) over bar 1 (1) over bar], with respect to the buffer layer CdTe((1) over bar 1 2), at the Hg0.535Cd0.465Te/CdTe heterojunction. The relationship of the tilt a ngles at the Hg0.535Cd0.465Te/CdTe/GaAs multilayer was also analyzed. (C) 1 999 Elsevier Science B.V. All rights reserved.