Direct fine-patterning of PZT thin films using photosensitive gel films derived from chemically modified metal-alkoxides

A direct fine-patterning process using photosensitive gel films derived fro m chemically modified metal-alkoxides has been applied to PbZr0.52Ti0.48O3 (PZT) ferroelectric thin films. The gel films derived from Zr- and Ti-butox ides modified with benzoylacetone and lead acetate showed an absorption ban d at around 360 nm, characteristic of the pi-pi* transition of remaining ch elate rings. The irradiation of the gel films with UV-light corresponding t o this band dissociated the chelate rings and simultaneously decreased the solubility of these gel films in acidic aqueous solutions or alcohols. On t he basis of this finding, fine-patterns of PZT ferroelectric thin films of several micrometers were directly formed on Pt/Ti/Si substrates through the subsequent processes of UV-irradiation through a mask, leaching and heat-t reatment for crystallization. The present fine-patterning process was confi rmed to have little affect on the ferroelectric properties of the patterned PZT thin films.