Electrical properties of In doped CdS thin films

Indium doped polycrystalline cadmium sulphide (CdS:In) thin films have been prepared by the spray pyrolysis technique on glass substrates in an enclos ed dome. The different scattering mechanisms such as lattice, impurity and grain boundary scattering for CdS:In films are observed at low temperature, in the range of 303 to 120 K. The experimentally determined mobilities due to these scatterings are well interpreted with those of theoretically calc ulated mobilities. The d.c. conductivity for CdS:In films has also been stu died in the same temperature region. The Mott variable range hopping conduc tion process followed below the temperature of 150 K. The Mott parameters s uch as N(E-F), R, W and alpha are found to be 1.26 x 10(19) eV(-1) cm(-3), 9.8 x 10(-7) cm, 0.02 eV(-1) and 2.38 x 10(6) cm(-1), respectively from the conductivity data.