In order to decrease the optical path length of an optoelectronic module, t
wo ways of achieving 45 degrees silicon mirrors with trenches defining the
mirror size are presented: dicing, and dry etching. The dicing was performe
d with a Disco DAD 361 dicing machine. To define the dry etched trench UV-l
ithography on electrodeposited resist was used. The electrodeposition was p
erformed using commercially available positive photoresist PEPR 2400 from S
hipley Ltd.