Test microstructures for measurement of SiC thin firm mechanical properties

In this work, test microstructures for SiC film mechanical property measure ments by beam bending using an atomic force microscope are presented. Cryst alline 300 nm thick beta-SiC layers obtained by high temperature multiple C implantation into Si have been used. The low residual stress level in the layers along with the high stiffness and excellent etch-stop properties of SIC allowed the fabrication of free standing microstructures using standard Si bulk micromachining techniques. This demonstrates the potential of SiC as an alternative to Si for MEMS applications.