Cavity QED effects in semiconductor microcavities

Citation
H. Eleuch et al., Cavity QED effects in semiconductor microcavities, J OPT B-QUA, 1(1), 1999, pp. 1-7
Citations number
43
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF OPTICS B-QUANTUM AND SEMICLASSICAL OPTICS
ISSN journal
14644266 → ACNP
Volume
1
Issue
1
Year of publication
1999
Pages
1 - 7
Database
ISI
SICI code
1464-4266(199902)1:1<1:CQEISM>2.0.ZU;2-W
Abstract
A theoretical investigation of cavity QED effects in semiconductor microcav ities containing quantum wells is presented. A model Hamiltonian is used to derive equations of motion for the quantum photon and exciton fields in th e cavity. Quantum effects such as squeezing and antibunching are predicted in the light field going out of the cavity under irradiation by a coherent laser field, if exciton-phonon scattering is weak enough. Exciton-phonon sc attering is shown to destroy the nonclassical effects and to yield excess n oise in the output field.