Temperature-dependent exciton recombination in asymmetrical ZnCdSe ZnSe double quantum wells

Temperature-dependent exciton recombination in asymmetrical ZnCdSe/ZnSe dou ble quantum wells is studied by recording photoluminescence spectra and pho toluminescence decay spectra. The exciton tunnelling from the wide well to the narrow well and the thermal dissociation of excitons are two factors th at influence the exciton recombination in this structure. In the narrow wel l, both of the two processes decrease the emission intensity, whereas, in t he wide well, these two processes have contrary influences on the exciton d ensity. The change of the emission intensity depends on which is the strong er one.