Field emission characteristics of SiC capped Si tip array by ion beam synthesis

High dose carbon implantation into Si tip array was performed to synthesize SiC/Si heterostructure tip array. This was done using a high beam current density metal vapor Vacuum are ion source. Silicon tip arrays were prepared by anisotropic chemical etching. An implantation energy of 35 keV using a dose of 1.0 x 10(18) ions/cm(2) was performed. The array was subsequently a nnealed in argon ambient at 1200 degrees C, for various times to form the S iC surface layer. Scanning electron microscopy shows that the Si tips were sharp and uniformly arranged. X-ray photoelectron spectroscopy confirmed th at a thin SiC surface layer had been formed. Results show that electron emi ssion properties measured in ultrahigh vacuum depended on the sample treatm ent. A typical turn-on field was 15 V/mu m when the emission current densit y reaches 1 mu A/cm(2). This compares with a turn-on field of about 35 V/mu m for an unimplanted Si tip array. (C) 1999 American Vacuum Society. [S073 4-2101(99)23404-5].