Growth and characterization of Ba0.6Sr0.4TiO3 thin films on Si with Pt electrodes

Both metalorganic chemical vapor deposition and pulsed laser deposition hav e been used to grow Ba0.6Sr0.4TiO3 (BST) thin films on Si with Pt electrode s. The smoother Pt electrodes allow the BST to:grow with greater crystallin ity. Thin Nm Pt/BST/Pt capacitors with a dielectric thickness Of around 170 nm show dielectric constants over 400 and dielectric losses in the range o f 0.01-0.03 at 10 kHz. The electric/dielectric properties of the BST films are further improved by first depositing a 27 nm BST seed layer by metalorg anic chemical vapor deposition followed by a 145 nm BST layer deposited by pulsed laser deposition. (C) 1999 American Vacuum Society. [S0734-2101(99)0 3404-1].