Pattern shape effects and artefacts in deep silicon etching

Citation
J. Kiihamaki et S. Franssila, Pattern shape effects and artefacts in deep silicon etching, J VAC SCI A, 17(4), 1999, pp. 2280-2285
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
17
Issue
4
Year of publication
1999
Part
2
Pages
2280 - 2285
Database
ISI
SICI code
0734-2101(199907/08)17:4<2280:PSEAAI>2.0.ZU;2-E
Abstract
Deep silicon etching in an inductively coupled plasma (ICP) reactor offers a high etch-rate (7 mu m/min), heavily vertical profile with simple oxide m asking.. Test structures with patterns of different sizes (from a few micro ns to over 100 mu m) and shapes (square and circular holes and trenches of variable width/length) have been etched to depths up to 500 mu m. Long narr ow features are etched falter than wide short features, indicating the thre e-dimensional nature of the reactive ion etching lag. Experiments have been done for many different etch times in order to understand aspect ratio dep endence of deep etching. Simple flow conductance model explains most of the observed aspect ratio and feature size dependence. (C) 1999 American Vacuu m Society. [S0734-2101(99)15104-2].