Dielectric properties of Al vertical bar V2O5 vertical bar Al thin film sandwich structures

Authors
Ramana, CV Hussain, OM Naidu, BS Julien, C
Citation
Cv. Ramana et al., Dielectric properties of Al vertical bar V2O5 vertical bar Al thin film sandwich structures, MAT SCI E B, 60(3), 1999, pp. 173-178
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
60
Issue
3
Year of publication
1999
Pages
173 - 178
Database
ISI
SICI code
0921-5107(19990629)60:3<173:DPOAVB>2.0.ZU;2-H
Abstract
Vanadium pentoxide thin films were prepared by the electron beam evaporatio n technique onto Coming 7059 glass substrates kept at a temperature of T-s= 423 K. The dielectric properties of Al \ V2O5 \ Al thin film sandwich stru ctures were studied in the frequency range 0.1-100 kHz and in the temperatu re range 125-450 K. Both the dielectric constant and the dielectric loss fa ctor were found to depend on frequency and temperature. The activation ener gy obtained for the dielectric relaxation process was about 0.36 eV. (C) 19 99 Elsevier Science S.A. All rights reserved.