Analysis of dopant diffusion in Si with stacking faults

The mathematically self-consistent solutions of the equations for the dopan t diffusions and the oxidation stacking faults, considered self-interstitia l and vacancy concentrations in silicon as unknowns, were not previously ob tained. In order to solve the problem, a new equation is derived from the d opant diffusion equations. Simultaneously solving this equation and the oxi dation stacking fault equation, a set of mathematically self-consistent sol utions is analytically obtained. Using the experimental results of dopant d iffusions and oxidation stacking faults at 1373 K, the mechanisms of the do pant diffusions and silicon self-diffusion are investigated. It was found t hat self-, P and B diffusions depend on the interstitialcy mechanism by abo ut 60, 45 and 35%, respectively, while Sb diffusion is almost governed only by the vacancy mechanism. Furthermore, fitting the approximate solutions p reviously obtained to the present solutions yielded the self-interstitial a nd vacancy diffusivity values as D-1 = 3.1 x 10(-14) m(2) s(-1) and D-v = 1 .6 x 10(-15) m(2) s(-1) at 1373 K.