Effects of Coulomb scattering on two-dimensional quantum transport investigated by gate-controlled charging of self-assembled quantum dots

Authors
Omling, P Carlsson, N Samuelson, L Seifert, W Wang, Q
Citation
P. Omling et al., Effects of Coulomb scattering on two-dimensional quantum transport investigated by gate-controlled charging of self-assembled quantum dots, MICROEL ENG, 47(1-4), 1999, pp. 39-41
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
47
Issue
1-4
Year of publication
1999
Pages
39 - 41
Database
ISI
SICI code
0167-9317(199906)47:1-4<39:EOCSOT>2.0.ZU;2-0
Abstract
Charging of self-assembled quantum dots located nearby a two dimensional el ectron gas shows that the Coulomb field from the trapped electrons is impor tant for inter-channel scattering processes between edge channels formed in magnetic fields. The effect is demonstrated both as a change of the amplit ude of the spin-split Landau-levels and as the introduction of the overshoo t effect in the quantum-Hall regime.