Conductance through zigzag quantum dots arrays

We fabricated quantum dots arrays on a GaAs/Al0.3Ga0.7As quantum well by us ing electron beam lithography and chemical wet etching, and studied their t ransport properties. We especially focused on geometrical dependence of con ductance through quantum dots arrays. We measured I-V characteristics of sa mples with two different geometrical forms, which consisted of ten quantum dots in straight and zigzag forms. We also investigated a difference in tra nsport properties between two types of samples, which are quantum dots arra ys with and without Al-g ate on top of the samples.