Citation
T. Maemoto et al., Quasi-one-dimensional electron transport in InAs mesoscopic devices, MICROEL ENG, 47(1-4), 1999, pp. 159-161
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317
→ ACNP
Volume
47
Issue
1-4
Year of publication
1999
Pages
159 - 161
Database
ISI
SICI code
0167-9317(199906)47:1-4<159:QETIIM>2.0.ZU;2-2
Abstract
Decent demonstrations of InAs quantum wire transistors (QWTs) are reported.
Quasi-one-dimensional (1D) electron transport properties are discussed fro
m analyses of FET characteristics measured on the different size QWTs.