Photoluminescence of InAs quantum wires on vicinal GaAs(110) surfaces

Authors
Bando, K Torii, S Shim, BR Ota, T Maehashi, K Kobayashi, K Nakashima, H
Citation
K. Bando et al., Photoluminescence of InAs quantum wires on vicinal GaAs(110) surfaces, MICROEL ENG, 47(1-4), 1999, pp. 163-165
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
47
Issue
1-4
Year of publication
1999
Pages
163 - 165
Database
ISI
SICI code
0167-9317(199906)47:1-4<163:POIQWO>2.0.ZU;2-H
Abstract
We have performed photoluminescence (PL) measurements of InAs quantum wires (QWRs) on vicinal GaAs(110) surfaces. Strongly polarized photoluminescence is observed for the InAs QWRs. At 140K, opposite polarization property is found in the vicinity of higher energy side than the peak energy of the QWR s. This result indicates that the opposite polarization property is due to light-hole transition.