Photoluminescence of modulation doped GaAs quantum wires on vicinal GaAs (110) substrates

Authors
Nishida, T Maehashi, K Ota, T Kobayashi, K Nakashima, H
Citation
T. Nishida et al., Photoluminescence of modulation doped GaAs quantum wires on vicinal GaAs (110) substrates, MICROEL ENG, 47(1-4), 1999, pp. 171-173
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
47
Issue
1-4
Year of publication
1999
Pages
171 - 173
Database
ISI
SICI code
0167-9317(199906)47:1-4<171:POMDGQ>2.0.ZU;2-O
Abstract
Modulation-doped GaAs quantum wires are grown on the surfaces with giant st eps which are naturally formed on vicinal GaAs (110) substrates by molecula r beam epitaxy (MBE). It is found that photoluminescence (PL) peaks shift t o lower energy with increasing doping level and to higher energy with incre asing excitation intensity. These results indicate that the GaAs quantum wi res are successfully modulation-doped.