Asymmetric tunnel barrier in a Si single-electron transistor

Authors
Fujiwara, A Takahashi, Y Murase, K
Citation
A. Fujiwara et al., Asymmetric tunnel barrier in a Si single-electron transistor, MICROEL ENG, 47(1-4), 1999, pp. 197-199
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
47
Issue
1-4
Year of publication
1999
Pages
197 - 199
Database
ISI
SICI code
0167-9317(199906)47:1-4<197:ATBIAS>2.0.ZU;2-8
Abstract
Strong asymmetry was found in conductance versus source-drain voltage in Si single-electron transistors. This suggests that the potential profile of t he tunnel barrier is asymmetric along the direction of current flow.