Atomically flat interface in SiGe Si heterostructnres formed by solid phase epitaxy: Significant increase in two-dimensional electron mobility

Authors
Miyao, M Nakagawa, K Sugii, N Yamaguchi, S
Citation
M. Miyao et al., Atomically flat interface in SiGe Si heterostructnres formed by solid phase epitaxy: Significant increase in two-dimensional electron mobility, MICROEL ENG, 47(1-4), 1999, pp. 221-223
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
47
Issue
1-4
Year of publication
1999
Pages
221 - 223
Database
ISI
SICI code
0167-9317(199906)47:1-4<221:AFIISS>2.0.ZU;2-E
Abstract
A new SiGe/Si heterostructure is fabricated through a combination of molecu lar beam epitaxy (MBE) and solid phase epitaxy (SPE). The hetro-interface o btained by SPE was atomically flat, as confirmed by transmission electron m icroscope (TEM) observation. This interface enables an ultrahigh electron m obility of the two-dimensional electron gas (2DEG).