A novel nanoscale resist using 10-undecanoic acid monolayers on silicon dioxide

In this paper, we discuss the use of 10-undecanoic acid monolayers on silic on dioxide films in a novel electron beam patterning process. The monolayer s are locally fixed by electron exposure and subsequently act as an oxide e tch initiator in HF vapor, thereby allowing the oxide to be patterned. We p resent the effects of various post-exposure solvent treatments on etch rate enhancement and selectivity. The influence of electron beam dose on the et ching of thermal and deposited SiO2 is also shown.