Fabrication of self-assembling InGaN and AlGaN quantum dots on AlGaN surfaces using anti-surfactant

We demonstrate InGaN and AlGaN quantum dots (QDs) formation on AlGaN surfac es vir metal organic chemical vapor deposition (MOCVD). Si anti-surfactant was used in order to modify surface energy balance for changing growth mode from 2-dimensional step-now growth to 3-dimensional nano-scale island form ation. The average lateral size and thickness of the InGaN and AlGaN QDs ar e 10-20 nm and 5 nm, respectively. Intense photoluminescence (PL) was obser ved from InGaN QDs even in room temperature. In and Al incorporation in InG aN and AlGaN QDs were estimated to be 22-52% and 1-5 %, respectively, from the PL spectrum.