Contribution of effective mass variation to electro-acoustic phonon interaction in semiconductor nanostructures

The finite-size effects of the electron-acoustic phonon of the deformation- potential interaction in semiconductor heterostructures are studied. Modifi cation of the interaction originates from the phonon induced changes of the interface spacing and electron effective mass. Calculations of the electro n mobility for a quantum well (QW) show that for narrow GaAs-based QWs, the contribution of the additional mechanisms to the intrasubband scattering d epends on the sign of the deformation potential constant and can exceed tha t from the usual deformation potential.