Control over size and density of sub-5nm gold dots by retarding-field single ion deposition (RSID)

Authors
Hori, M Goto, T Woodham, RG Ahmed, H
Citation
M. Hori et al., Control over size and density of sub-5nm gold dots by retarding-field single ion deposition (RSID), MICROEL ENG, 47(1-4), 1999, pp. 401-403
Citations number
3
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
47
Issue
1-4
Year of publication
1999
Pages
401 - 403
Database
ISI
SICI code
0167-9317(199906)47:1-4<401:COSADO>2.0.ZU;2-U
Abstract
Gold dots of 2.5nm mean diameter and 0.8nm standard deviation have been fab ricated successfully on chromium oxide (CrOx) thin films using a retarding- field single ion deposition (RSID) technique. The sub-5nm gold dots have be en also formed on PMMA and diamond-like carbon (DLC) films with controlling the landing energy and dose of gold ions. The formation of single electron devices, quantum dots, nonopillars and other nano-scale device structures is proposed using the RSID technique.