Merits of CMOS SIMOX technology for low-voltage SRAM macros

A 128-kbit SRAM (Static Random Access Memory) macro with the 0.35 mu m FD ( Fully-Depleted)-CMOS/SIMOX (Separation by Implantation of Oxygen) technolog y has been developed to demonstrate the merits of that technology for the l ow-voltage applications. Its access time at Vdd=1.5V was comparable with th at obtained with the 0.35 mu m standard bulk CMOS technology at Vdd=3.3V, d ue to the combination of the small S/D capacitance and the small back-bias effect. As the yield of the 128-kbit SRAM: macros was almost the same as th e standard bulk CMOS technology, the manufacturability of the 0.35 mu m FD- CMOS/SIMOX technology has also been demonstrated.