High power heterojunction GaAs switch IC for GSM application

A high handling power of 4W and low controlled voltage of 3V GaAs Switch IC (SWIC), which is available in the hand-held phone unit for GSM dual and tr iple mode applications, has been developed. As a basic SW element, a shallo w Vth HJFET has been adopted. By optimizing:the structure of the recessed g ate, the substrate epitaxial layer; and multi-gate FET SW circuits, the SWI C has exhibited high linearity of a Pin-Pout with P-1dB (Pin) of more than 38dBm, an insertion loss of less than 0.6dB and an isolation of more than 2 2dB in a wide band frequency range of 0.5 to 2.0GHz.