Population inversion induced by resonant states in semiconductors

Authors
Odnoblyudov, MA Yassievich, IN Kagan, MS Galperin, YM Chao, KA
Citation
Ma. Odnoblyudov et al., Population inversion induced by resonant states in semiconductors, PHYS REV L, 83(3), 1999, pp. 644-647
Citations number
13
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
83
Issue
3
Year of publication
1999
Pages
644 - 647
Database
ISI
SICI code
0031-9007(19990719)83:3<644:PIIBRS>2.0.ZU;2-Q
Abstract
We present a theoretical prediction of a new mechanism for carrier populati on inversion in semiconductors under an applied electric field with suitabl e field strength. The mechanism is originated from a coherent capture-emiss ion-type inelastic scattering of resonant states. We support our theory wit h concrete calculations for shallow acceptor resonant states in strained p- Ge where a lasing in THz frequency region has been recently observed.