The temperature dependence of conductivity sigma(T) in the metallic phase o
f a two-dimensional electron system in silicon has been studied for differe
nt concentrations of local magnetic moments. The local moments have been in
duced by disorder, and their number was varied using substrate bias. The da
ta suggest that in the limit of T --> O the metallic behavior, as character
ized by d sigma/dT < 0, is suppressed by an arbitrarily small amount of sca
ttering by local magnetic moments.