Temperature and time evolution of ripple structure induced by ion sputtering on Cu(110)

Citation
S. Rusponi et al., Temperature and time evolution of ripple structure induced by ion sputtering on Cu(110), PHYS LOW-D, 5-6, 1999, pp. 95-103
Citations number
29
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICS OF LOW-DIMENSIONAL STRUCTURES
ISSN journal
02043467 → ACNP
Volume
5-6
Year of publication
1999
Pages
95 - 103
Database
ISI
SICI code
0204-3467(1999)5-6:<95:TATEOR>2.0.ZU;2-R
Abstract
The surface morphology generated by ion sputtering on a Cu(110) crystal has been investigated by Scanning Tunneling Microscopy (STM). A ripple structu re is observed for all the considered values of the incident ion beam angle theta (0 degrees < theta < 70 degrees). In particular, normal:sputtering p roduces a well defined ripple structure whose wave vector rotates from (001 ) to (1 (1) over bar 0) by increasing the substrate temperature. Moreover, for theta = 45 degrees the ripple wavelength lambda increases in time follo wing a scaling law lambda proportional to t(z), with z = 0.26 +/- 0.02. The se results are described by a continuum equation which includes, in additio n to the surface curvature dependent erosion terms, a diffusion term that t akes into account both the surface anisotropy and the effect of an Ehrlich- Schwoebel barrier.