The positron diffusion length L+ and electron and positron work functi
ons (phi(-) and phi(+)) of the same sample of 3C-SiC epitaxially grown
on a Si(001) substrate have been experimentally determined, together
with re-emitted slow positron yields. The results allow conclusions on
the quality and thickness of the 3C-SiC epitaxial layer as well as an
assessment of the accuracy of earlier first-principles calculations o
f positron-related materials properties.