It is probable that charge-up of a glass substrate during plasma proce
ssing, such as ashing and/or etching, deteriorates the production yiel
d of TFT-LCD devices. In order to control the production yield, it is
necessary to understand the electrification mechanism of glass surface
in plasma and then offer countermeasure to the process. We measured t
he surface potential of the glass substrate during discharge. We expos
ed the glass substrate to plasma in a parallel-plate electrode system
by introducing Ar, O-2 or SF6 gas into the plasma reactor and exciting
with 13.56MHz RF or DC power supply. As a result, we found that the c
harging of the glass substrate in plasma was considerably affected by
gas species and power sources. We discussed the phenomenon from a view
point of the ionizatiation and the movement of molecular ions in plasm
a.