Thermal conductivity of a Tm3+: GdVO4 crystal and the operational characteristics of a microchip laser based on it

Authors
Zagumennyi, AI Zavartsev, YD Studenikin, PA Vlasov, VI Shcherbakov, IA Wyss, CP Luthy, W Weber, HP Popov, PA
Citation
Ai. Zagumennyi et al., Thermal conductivity of a Tm3+: GdVO4 crystal and the operational characteristics of a microchip laser based on it, QUANTUM EL, 29(4), 1999, pp. 298-300
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
QUANTUM ELECTRONICS
ISSN journal
10637818 → ACNP
Volume
29
Issue
4
Year of publication
1999
Pages
298 - 300
Database
ISI
SICI code
1063-7818(199904)29:4<298:TCOATG>2.0.ZU;2-E
Abstract
The thermal conductivity of a Tm3+:GdVO4 crystal was measured in the temper ature range 50-300 K. At a temperature of 300 K, the thermal conductivity a long the c axis amounted to 9.7 W m(-1) K-1, which is higher than the therm al conductivity of a Cr:Tm:Ho:YAG crystal. A maximum output power of 1.4 W (lambda = 1.915 mu m) was attained in a Tm3+:GdVO4 microchip laser for a la sing threshold of 5.7 W and a differential efficiency of 9.2%. A GdVO4 arra y was found to have a number of advantages compared with other media for th e fabrication of diode-pumped lasers.