Conduction band offset of the CdS ZnSe heterostructure

Authors
Dinger, A Petillon, S Grun, M Hetterich, M Klingshirn, C
Citation
A. Dinger et al., Conduction band offset of the CdS ZnSe heterostructure, SEMIC SCI T, 14(7), 1999, pp. 595-598
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
14
Issue
7
Year of publication
1999
Pages
595 - 598
Database
ISI
SICI code
0268-1242(199907)14:7<595:CBOOTC>2.0.ZU;2-1
Abstract
The conduction band offset of the type II heterostructure CdS/ZnSe is deter mined from photoluminescence data of single quantum wells. The cubic quantu m well samples have been grown by compound-source molecular-beam epitaxy. P hotoluminescence spectra were measured at low temperatures and evaluated by fitting an effective mass model to the transition energies. A conduction b and offset of (0.80 +/- 0.1) eV and an effective electron mass for cubic Cd S of (0.18 +/- 0.05)m(0) were determined.