Gate quality of ex situ deposited Al/SiNx : H/n-In0.53Ga0.47As devices after rapid thermal annealing

Ex situ deposited SiNx:H/In0.53Ga0.47As metal-insulator-semiconductor devic es, with a minimum of interface state density of 3.5 x 10(11) eV(-1) cm(-2) have been obtained by electron cyclotron resonance plasma method at a low substrate temperature (200 degrees C), after a rapid thermal annealing trea tment. The effects of annealing temperature on interfacial and bull; electr ical properties have been analysed using the C-V high-low frequency method and I-V measurements. The results show that, up to 600 degrees C, the annea ling procedure gradually improves the interface properties of the devices. The frequency dispersion, the hysteresis and the interface trap density dim inish, while the resistivity and the electrical breakdown field of the insu lator film increase up to values of 8 x 10(15)Omega cm and 4 MV cm(-1), res pectively. We explain this behaviour in terms of the thermal relaxation and the reconstruction of the SiNx:H lattice and its interface with the In0.53 Ga0.47As. At higher annealing temperatures, a sharp degradation of the stru cture occurs.