Influence of native defects on polytypism in SiC

Authors
Lebedev, AA
Citation
Aa. Lebedev, Influence of native defects on polytypism in SiC, SEMICONDUCT, 33(7), 1999, pp. 707-709
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
33
Issue
7
Year of publication
1999
Pages
707 - 709
Database
ISI
SICI code
1063-7826(199907)33:7<707:IONDOP>2.0.ZU;2-9
Abstract
An analysis of experimental data on the influence of native defects of the crystalline lattice on polytypism in silicon carbide has been performed. A simple analytical expression, which links the degree of hexagonality of the polytype with the concentration of carbon and silicon vacancies, was obtai ned. The possible dependence of the model parameters on the experimental co nditions is investigated. (C) 1999 American Institute of Physics. [S1063-78 26(99)00107-6].