Antistructural defects in PbTe-type semiconductors

Authors
Masterov, VF Bondarevskii, SI Nasredinov, FS Seregin, NP Seregin, PP
Citation
Vf. Masterov et al., Antistructural defects in PbTe-type semiconductors, SEMICONDUCT, 33(7), 1999, pp. 710-711
Citations number
2
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
33
Issue
7
Year of publication
1999
Pages
710 - 711
Database
ISI
SICI code
1063-7826(199907)33:7<710:ADIPS>2.0.ZU;2-3
Abstract
Mossbauer emission spectroscopy on the isotope Te-119m(Sn-119m) is used to identify tin impurity centers in PbTe and PbS lattices. Using the emission variant of Mossbauer spectroscopy makes it possible to stabilize the tin im purity atoms in the anion sublattice, i.e., to obtain antistructural defect s. The charge state of the tin impurity atoms displaced from the anion subl attice is found to depend on the position of the Fermi level. (C) 1999 Amer ican Institute of Physics. [S1063-7826(99)00207-0].