Electrical properties of nuclear-doped indium antimonide

The possibility of nuclear doping of indium antimonide over a wide range of concentrations (5x10(14)-10(18) cm(-3)) by irradiation with reactor neutro ns is investigated; the effect of irradiation and subsequent heat treatment s on the electrical parameters of the material is investigated. A comparati ve analysis of the quality of nuclear-doped and conventional InSb is used t o demonstrate the possibility of the practical use of this nuclear-doped ma terial. (C) 1999 American Institute of Physics. [S1063-7826(99)00307-5].