Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it

The electrical properties of epitaxial InAs and solid solutions based on it (InGaAsSb, InAsSbP, InAsGa, InAsP) have been investigated. It is shown tha t intentionally undoped crystals have n-type conductivity, which is determi ned by shallow donor impurities (E-1 = 0.002-0.003 eV) and structural defec ts (E-2 = 0.02-0.03 eV and E-3 = 0.09-0.10 eV). It is shown that growth of epitaxial InAs using the neutral solvent Pb and also rare-earth elements ma kes it possible to reduce the electron density by almost an order of magnit ude (to levels as low as 3 x 10(15) cm(-3)) due to due to a decrease in the density of structural defects. (C) 1999 American Institute of Physics. [S1 063-7826(99)00507-4].