Photoelectric effects in silicon switching structures utilizing rare-earthfluorides

Authors
Rozhkov, VA Shalimova, MB
Citation
Va. Rozhkov et Mb. Shalimova, Photoelectric effects in silicon switching structures utilizing rare-earthfluorides, SEMICONDUCT, 33(7), 1999, pp. 731-735
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
33
Issue
7
Year of publication
1999
Pages
731 - 735
Database
ISI
SICI code
1063-7826(199907)33:7<731:PEISSS>2.0.ZU;2-D
Abstract
The photoelectric characteristics of silicon metal-insulator-semiconductor switching structures are investigated; cerium, dysprosium, and erbium fluor ides are used for the insulator layer. It is shown that the photoelectric c haracteristics of the structures in the low-resistance state are similar to those of a metal-(tunneling insulator)-semiconductor structure; in particu lar, a mechanism of injection amplification of the photocurrent comes into play. (C) 1999 American Institute of Physics. [S1063-7826(99)00807-8].