Production and investigation of AgIn5S8/(InSe, GaSe) heterojunctions

It is shown that photosensitive AgIn5S8/(InSe, GaSe) heterojunctions can be fabricated using bulk crystals grown from the melt and from the vapor phas e or polycrystalline thin films of the ternary compound prepared by pulsed laser evaporation. The spectral curves of the photosensitivity of the heter ojunctions are investigated as a function of the photodetection geometry. I t is concluded that the resulting structure have a promising potential as w ideband and selective photodetectors. (C) 1999 American Institute of Physic s. [S1063-7826(99)01007-8].