Heterojunctions utilizing CuInxGa1-xTe2 thin films

Polycrystalline CuInxGa1-xTe2 thin films are prepared by pulsed laser evapo ration. The room-temperature hole densities and mobilities of the films are determined. It is established that direct optical contact of the postgrowt h surface of such films with the surface of a cleaved InSe wafer exhibits t he photovoltaic effect. The spectra of the relative quantum efficiency of p hotoconversion of the heterojunctions are investigated as a function of the composition of the CuInxGa1-xTe2 films and the photodetection geometry. It is concluded that the fabricated heterojunctions have potential applicatio ns in photodetectors of unpolarized radiation. (C) 1999 American Institute of Physics. [S1063-7826(99)01307-1].