Transport and optical properties of tin delta-doped GaAs structures

The transport and optical properties of tin delta layers in GaAs are invest igated as functions of the Sn concentration. The Shubnikov-de Haas and Hall effects are measured in the temperature range 0.4-12 K in magnetic fields up to 38 T. The band diagrams and quantum mobilities of electrons in the qu antum-well subbands are calculated. Features associated with electronic tra nsitions from quantum-well levels are found in the photoluminescence spectr a of the structures. Oscillations of the resistance are observed in a magne tic field parallel to the delta layer and are attributed to features in the density of states at the Fermi level. (C) 1999 American Institute of Physi cs. [S1063-7826(99)01607-5].