Electron-beam diagnostics are used to study self-organized quantum wells wh
ich form within ultrashallow silicon p(+)-n junctions under the conditions
of nonequilibrium boron diffusion. The energy dependence and current-voltag
e characteristics of the electron-beam-induced conductivity are investigate
d with relative dominance of both longitudinal and transverse quantum wells
, which are oriented parallel and perpendicularly to the p-n junction plane
, respectively. Current-voltage characteristics of the electron-beam-induce
d conductivity are exhibited for the first time with both reverse and forwa
rd biasing of the silicon p(+)-n junction. This became possible because of
the presence of self-organized transverse quantum wells within the ultrasha
llow p(+) diffusion profile, while self-organized longitudinal quantum well
s promote the appearance of electron-beam-induced conductivity only when th
e p(+)-n junction is reverse-biased. The distribution of the probability fo
r the separation of electron-hole pairs across the thickness of the crystal
derived from the energy dependences of the electron-beam-induced conductiv
ity reveals effects of the avalanche multiplication of the nonequilibrium c
arriers as a result of the spatial separation of electrons and holes in the
field of a p(+)-n junction that contains self-organized transverse quantum
wells. (C) 1999 American Institute of Physics. [S1063-7826(99)01807-4].