Self-organized nanoscale InP islands in an InGaP GaAs host and InAs islands in an InGaAs InP host

Arrays of strained nanoscale InP islands in an In0.49Ga0.51P host on a GaAs (100) substrate and InAs islands in a In0.53Ga0.47As host on an InP(100) su bstrate are obtained by metalorganic vapor-phase epitaxy (MOVPE). Their str uctural and photoluminescence properties are investigated. It is shown that the nanoscale islands that are formed measure 80 nm (InP/InGaP) and 25-60 nm (InAs/InGaAs). The photoluminescence spectra of the nanoscale islands di splay bands in the wavelength ranges 0.66-0.72 and 1.66-1.91 mu m at 77 K w ith maxima whose position does not vary as the effective thickness of InP a nd InAs increases. The radiation efficiency of the nanoscale InP islands is two orders of magnitude greater than the luminescence intensity of the InA s islands. (C) 1999 American Institute of Physics. [S1063-7826(99)01907-9].