Photocapacitance relaxation in amorphous As2Se3 films

Authors
Vasiliev, IA Shutov, SD
Citation
Ia. Vasiliev et Sd. Shutov, Photocapacitance relaxation in amorphous As2Se3 films, SEMICONDUCT, 33(7), 1999, pp. 792-794
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
33
Issue
7
Year of publication
1999
Pages
792 - 794
Database
ISI
SICI code
1063-7826(199907)33:7<792:PRIAAF>2.0.ZU;2-T
Abstract
Studies of the photocapacitance of a-As2Se3 films reveal that its relaxatio n has a fast and a slow component, leading to two distinct spectra for the density and absorption cross section of deep levels, with different thresho lds and magnitudes. The authors associate the fast component of the relaxat ion with photoemission of holes from D+ centers, and speculate on the possi ble nature of the slow component as well. (C) 1999 American Institute of Ph ysics. [S1063-7826(99)02007-4].