A comparison of the temperature dependences of photoeffect quantum efficiencies in GaAs p-n structures and Schottky diodes

A comparison is made of how the quantum efficiencies for photoelectric conv ersion in p-n- and m-s-structures based on GaAs depend on temperature. For photon energies less than or the same order as the width of the band gap, t he temperature dependences of the p-n- and m-s- structures are similar. In the range of photon energies larger than the width of the band gap, the qua ntum efficiency of p-n- structures is temperature independent, whereas the quantum efficiency of m-s- structures exhibits a strong temperature depende nce. A qualitative explanation of this phenomenon is given. (C) 1999 Americ an Institute of Physics. [S1063-7826(99)02307-8].