Fabrication of discrete p-n junctions separated by an insulating layer using direct wafer bonding

Three types of fabrication cycle based on the use of direct wafer bonding a re developed for making pairs of discrete p-n-junctions separated by an ins ulating layer. The forward and reverse branches of the I-V characteristics of the resulting diodes are investigated. For all three fabrication cycles, the differential resistance of the forward branch of the discrete p-n- jun ctions is similar to 0.01 Ohm, the reverse breakdown is similar to 400 V, a nd the width of the aperture region for the back-to-back diodes is 0.22 V. Taken as a whole, these data, along with the high integrated photosensitivi ty of the diodes, indicate that direct wafer bonding produces no oxide barr ier between the p- and n-regions and forms high-quality interfaces. (C) 199 9 American Institute of Physics. [S1063-7826(99)02407-2].