Infrared monitoring system for the detection of organic contamination on a300 mm Si wafer

Authors
Endo, M Yoshida, H Maeda, Y Miyamoto, N Niwano, M
Citation
M. Endo et al., Infrared monitoring system for the detection of organic contamination on a300 mm Si wafer, APPL PHYS L, 75(4), 1999, pp. 519-521
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
4
Year of publication
1999
Pages
519 - 521
Database
ISI
SICI code
0003-6951(19990726)75:4<519:IMSFTD>2.0.ZU;2-6
Abstract
An infrared (IR) monitoring system has been developed for the detection and characterization of hydrocarbon contamination on 300 mm (12 in.) Si wafer surfaces. IR propagates through the Si wafer, internally reflecting about 6 00 times, which enables us to detect a trace of organic contamination on th e wafer surface. The present system allows for the detection of hydrocarbon contamination on 300 mm Si wafer surfaces with a contamination level of be low 10(11) carbon atoms/cm(2). [S0003-6951(99)03830-9].(C) 1999 American In stitute of Physics.