Self-organized growth of Fe nanowire array on H2O/Si(100)(2 x n)

Citation
A. Kida et al., Self-organized growth of Fe nanowire array on H2O/Si(100)(2 x n), APPL PHYS L, 75(4), 1999, pp. 540-542
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
4
Year of publication
1999
Pages
540 - 542
Database
ISI
SICI code
0003-6951(19990726)75:4<540:SGOFNA>2.0.ZU;2-X
Abstract
By evaporating Fe on to a water-terminated Si(100)(2xn) surface, we formed an Fe wire array reflecting the 2xn surface reconstruction. The average wir e width was 2 nm and the period was 3 nm. The formation was caused by the d eposited Fe atoms diffusing over the water-terminated flat area and being t rapped at dimer vacancy lines. This array is applicable to magnetic devices . (C) 1999 American Institute of Physics. [S0003-6951(99)03930-3].