Dielectric properties of alkoxy-derived Sr2Nb2O7 thin films crystallized via rapid thermal annealing

Authors
Shoyama, M Tsuzuki, A Kato, K Murayama, N
Citation
M. Shoyama et al., Dielectric properties of alkoxy-derived Sr2Nb2O7 thin films crystallized via rapid thermal annealing, APPL PHYS L, 75(4), 1999, pp. 561-562
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
4
Year of publication
1999
Pages
561 - 562
Database
ISI
SICI code
0003-6951(19990726)75:4<561:DPOAST>2.0.ZU;2-4
Abstract
The low temperature crystallization of ferroelectric Sr2Nb2O7 thin films on the Pt/TiO2/SiO2/Si(100) substrate was attained by rapid thermal annealing followed by each coating step using Sr2Nb2O7 precursor solution. X-ray dif fraction results indicated that the crystallization of the Sr2Nb2O7 phase w as initiated at 550 degrees C, and the Sr2Nb2O7 films exhibited the (0k0) o rientation. The dielectric constant and loss value of the films annealed at 650 and 750 degrees C are 48, 0.022 and 50, 0.007, respectively, at room t emperature (100 kHz).(C) 1999 American Institute of Physics. [S0003-6951(99 )03130-7].